Interplay Between Process-Induced and Statistical Variability in 14-nm CMOS Technology Double-Gate SOI FinFETs (2013)

First Author: Wang X
Attributed to:  Atomic Scale Simulation of Nanoelectronic Devices funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/ted.2013.2267745

Publication URI: http://dx.doi.org/10.1109/ted.2013.2267745

Type: Journal Article/Review

Parent Publication: IEEE Transactions on Electron Devices

Issue: 8