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Drain bias impact on statistical variability and reliability in 20 nm bulk CMOS technology (2013)

First Author: Xingsheng Wang

Attributed to: Atomic Scale Simulation of Nanoelectronic Devices funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/ulis.2013.6523492

Publication URI: http://dx.doi.org/10.1109/ulis.2013.6523492

Type: Conference/Paper/Proceeding/Abstract

ISBN: 978-1-4673-4800-3