Molecular beam epitaxy of GaNAs alloys with high As content for potential photoanode applications in hydrogen production (2010)
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1116/1.3368600
Publication URI: http://dx.doi.org/10.1116/1.3368600
Type: Journal Article/Review
Parent Publication: Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
Issue: 3