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Molecular beam epitaxy of GaNAs alloys with high As content for potential photoanode applications in hydrogen production (2010)

First Author: Novikov S

Attributed to: Feasibility study of growth by MBE of As doped GaN layers for photoanode applications in hydrogen production by photoelectrochemical water splitting funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1116/1.3368600

Publication URI: http://dx.doi.org/10.1116/1.3368600

Type: Journal Article/Review

Parent Publication: Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena

Issue: 3