Reduction of dark current and unintentional background doping in InGaAsN photodetectors by ex situ annealing (2010)
Attributed to:
New high-performance avalanche photodiodes based on the unique properties of dilute nitrides
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1117/12.853912
Publication URI: http://dx.doi.org/10.1117/12.853912
Type: Conference/Paper/Proceeding/Abstract