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Reduction of dark current and unintentional background doping in InGaAsN photodetectors by ex situ annealing (2010)

First Author: Tan S

Attributed to: New high-performance avalanche photodiodes based on the unique properties of dilute nitrides funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1117/12.853912

Publication URI: http://dx.doi.org/10.1117/12.853912

Type: Conference/Paper/Proceeding/Abstract