High aspect ratio etching using a fullerene derivative spin-on-carbon hardmask (2012)

First Author: Frommhold A
Attributed to:  Next Generation Resist Technology for the Semiconductor Industry funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1117/12.916426

Publication URI: http://dx.doi.org/10.1117/12.916426

Type: Conference/Paper/Proceeding/Abstract