Growth of Smooth, Low-Defect Germanium Layers on (111) Silicon via an Intermediate Islanding Process (2012)
Attributed to:
Renaissance Germanium
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1143/apex.5.071301
Publication URI: http://dx.doi.org/10.1143/apex.5.071301
Type: Journal Article/Review
Parent Publication: Applied Physics Express
Issue: 7