GaInNAs-based Hellish-vertical cavity semiconductor optical amplifier for 1.3 µm operation. (2011)
Attributed to:
Electrically Pumped Broad Band and Vertical Cavity Semiconductor Dilute Nitride Amplifiers for Metro and Acess Networks
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1186/1556-276x-6-104
PubMed Identifier: 21711630
Publication URI: http://europepmc.org/abstract/MED/21711630
Type: Journal Article/Review
Volume: 6
Parent Publication: Nanoscale research letters
Issue: 1
ISSN: 1556-276X