Low-voltage broad-band electroabsorption from thin Ge/SiGe quantum wells epitaxially grown on silicon. (2013)
Attributed to:
UK Silicon Photonics
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1364/oe.21.000867
PubMed Identifier: 23388980
Publication URI: http://europepmc.org/abstract/MED/23388980
Type: Journal Article/Review
Volume: 21
Parent Publication: Optics express
Issue: 1
ISSN: 1094-4087