Argon annealing procedure for producing an atomically terraced 4H-SiC (0001) substrate and subsequent graphene growth (2012)

First Author: Strudwick A
Attributed to:  Proof-of-principle proposal: Developing epitaxial graphene for nanoelectronics funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1557/jmr.2012.213

Publication URI: http://dx.doi.org/10.1557/jmr.2012.213

Type: Journal Article/Review

Parent Publication: Journal of Materials Research

Issue: 1