Defect Reduction in Semi-Polar (112¯2) Gallium Nitride Grown Using Epitaxial Lateral Overgrowth (2013)
Attributed to:
Materials World Network to Optimize the Growth of InGaN Quantum Dots within High Quality Optical Micro-Cavities
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.7567/jjap.52.08jb01
Publication URI: http://dx.doi.org/10.7567/jjap.52.08jb01
Type: Journal Article/Review
Parent Publication: Japanese Journal of Applied Physics
Issue: 8S