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Photoluminescence of Single GaN/InGaN Nanorod Light Emitting Diode Fabricated on a Wafer Scale (2013)

First Author: Chan C

Attributed to: Materials World Network to Optimize the Growth of InGaN Quantum Dots within High Quality Optical Micro-Cavities funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.7567/jjap.52.08je20

Publication URI: http://dx.doi.org/10.7567/jjap.52.08je20

Type: Journal Article/Review

Parent Publication: Japanese Journal of Applied Physics

Issue: 8S