160 GHz Passively Mode-Locked AlGaInAs 1.55 µm Strained Quantum-Well Lasers With Deeply Etched Intracavity Mirrors (2013)
Attributed to:
High Power, High Frequency Mode-locked Semiconductor Lasers
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/jstqe.2012.2230318
Publication URI: http://dx.doi.org/10.1109/jstqe.2012.2230318
Type: Journal Article/Review
Parent Publication: IEEE Journal of Selected Topics in Quantum Electronics
Issue: 4