A new analytical method for characterising the bonding environment at rough interfaces in high-k gate stacks using electron energy loss spectroscopy. (2010)

First Author: Mendis BG
Attributed to:  SuperSTEM - the UK aberration-corrected STEM facility funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1016/j.ultramic.2009.09.013

PubMed Identifier: 19875234

Publication URI: http://europepmc.org/abstract/MED/19875234

Type: Journal Article/Review

Volume: 110

Parent Publication: Ultramicroscopy

Issue: 2

ISSN: 0304-3991