Temperature Dependence of Avalanche Breakdown in InP and InAlAs (2010)
Attributed to:
Novel InGaAs/InAlAs travelling wave avalanche photodiode for ultra high speed photonic applications
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/jqe.2010.2044370
Publication URI: http://dx.doi.org/10.1109/jqe.2010.2044370
Type: Journal Article/Review
Parent Publication: IEEE Journal of Quantum Electronics
Issue: 8