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Statistical Variability in Fully Depleted SOI MOSFETs Due to Random Dopant Fluctuations in the Source and Drain Extensions (2012)

First Author: Markov S

Attributed to: Meeting the design challenges of the nano-CMOS electronics funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/led.2011.2179114

Publication URI: http://dx.doi.org/10.1109/led.2011.2179114

Type: Journal Article/Review

Parent Publication: IEEE Electron Device Letters

Issue: 3