Statistical Variability in Fully Depleted SOI MOSFETs Due to Random Dopant Fluctuations in the Source and Drain Extensions (2012)
Attributed to:
Meeting the design challenges of the nano-CMOS electronics
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/led.2011.2179114
Publication URI: http://dx.doi.org/10.1109/led.2011.2179114
Type: Journal Article/Review
Parent Publication: IEEE Electron Device Letters
Issue: 3