Microstructural, optical, and electrical characterization of semipolar (112¯2) gallium nitride grown by epitaxial lateral overgrowth (2010)
Attributed to:
Nitrides for the 21st century
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1063/1.3498813
Publication URI: http://dx.doi.org/10.1063/1.3498813
Type: Journal Article/Review
Parent Publication: Journal of Applied Physics
Issue: 8