Microstructural, optical, and electrical characterization of semipolar (112¯2) gallium nitride grown by epitaxial lateral overgrowth (2010)

First Author: Zhu T
Attributed to:  Materials Challenges in GaN-based Light Emitting Structures funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.3498813

Publication URI: http://dx.doi.org/10.1063/1.3498813

Type: Journal Article/Review

Parent Publication: Journal of Applied Physics

Issue: 8