1.55 µm electroluminescence from strained n-Ge quantum wells on silicon substrates (2012)

First Author: Gallacher K

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/group4.2012.6324093

Publication URI: http://dx.doi.org/10.1109/group4.2012.6324093

Type: Conference/Paper/Proceeding/Abstract

ISBN: 978-1-4577-0826-8