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Impact ionization and large room-temperature magnetoresistance in micron-sized high-mobility InAs channels (2014)

First Author: Velichko A

Attributed to: InAsNSb Dilute Nitride Materials for Mid-infrared Devices & Applications funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1103/physrevb.90.085309

Publication URI: http://dx.doi.org/10.1103/physrevb.90.085309

Type: Journal Article/Review

Parent Publication: Physical Review B

Issue: 8