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Studying atomic scale structural and electronic properties of ion implanted silicon samples using cross-sectional scanning tunneling microscopy (2013)

First Author: Studer P

Attributed to: New Tools for Nanometrology funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.4772508

Publication URI: http://dx.doi.org/10.1063/1.4772508

Type: Journal Article/Review

Parent Publication: Applied Physics Letters

Issue: 1