Polarized infrared reflectance study of free standing cubic GaN grown by molecular beam epitaxy (2014)
Attributed to:
Free-standing wurtzite AlGaN substrates for deep ultraviolet (DUV) devices.
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1016/j.matchemphys.2014.03.008
Publication URI: http://dx.doi.org/10.1016/j.matchemphys.2014.03.008
Type: Journal Article/Review
Parent Publication: Materials Chemistry and Physics
Issue: 1-2