Localization effects and band gap of GaAsBi alloys Localization effects and band gap of GaAsBi alloys (2014)
Attributed to:
Materials World Network: III-V Bismide Materials for IR and Mid IR Semiconductors
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1002/pssb.201350311
Publication URI: http://dx.doi.org/10.1002/pssb.201350311
Type: Journal Article/Review
Parent Publication: physica status solidi (b)
Issue: 6