Localization effects and band gap of GaAsBi alloys Localization effects and band gap of GaAsBi alloys (2014)

First Author: Mohmad A
Attributed to:  Materials World Network: III-V Bismide Materials for IR and Mid IR Semiconductors funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1002/pssb.201350311

Publication URI: http://dx.doi.org/10.1002/pssb.201350311

Type: Journal Article/Review

Parent Publication: physica status solidi (b)

Issue: 6