Plasma-assisted electroepitaxy as a method for the growth of GaN layers (2011)
Attributed to:
Free-standing zinc-blende (cubic) GaN, AlN and AlGaN layers grown by molecular beam epitaxy
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1016/j.jcrysgro.2010.12.062
Publication URI: http://dx.doi.org/10.1016/j.jcrysgro.2010.12.062
Type: Journal Article/Review
Parent Publication: Journal of Crystal Growth
Issue: 1
ISSN: 0022-0248