Effect of coalescence layer thickness on the properties of thin-chip InGaN/GaN light emitting diodes with embedded photonic quasi-crystal structures (2012)

First Author: Shields P

Attributed to: Lighting the Future funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1002/pssa.201100420

Publication URI: http://dx.doi.org/10.1002/pssa.201100420

Type: Journal Article/Review

Parent Publication: physica status solidi (a)

Issue: 3