Atomic layer deposition of Ti-HfO2 dielectrics (2013)
Attributed to:
High permittivity dielectrics on Ge for end of Roadmap application
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1116/1.4748570
Publication URI: http://dx.doi.org/10.1116/1.4748570
Type: Journal Article/Review
Parent Publication: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
Issue: 1
ISSN: 0734-2101