Atomic layer deposition of Ti-HfO2 dielectrics (2013)

First Author: Werner M
Attributed to:  High permittivity dielectrics on Ge for end of Roadmap application funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1116/1.4748570

Publication URI: http://dx.doi.org/10.1116/1.4748570

Type: Journal Article/Review

Parent Publication: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Issue: 1

ISSN: 0734-2101