Weak antilocalization of high mobility holes in a strained germanium quantum well heterostructure. (2015)

First Author: Foronda J
Attributed to:  Spintronic device physics in Si/Ge Heterostructures. funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1088/0953-8984/27/2/022201

PubMed Identifier: 25469938

Publication URI: http://europepmc.org/abstract/MED/25469938

Type: Journal Article/Review

Volume: 27

Parent Publication: Journal of physics. Condensed matter : an Institute of Physics journal

Issue: 2

ISSN: 0953-8984