An extremely high room temperature mobility of two-dimensional holes in a strained Ge quantum well heterostructure grown by reduced pressure chemical vapor deposition (2014)
Attributed to:
Spintronic device physics in Si/Ge Heterostructures.
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.7567/jjap.53.04eh02
Publication URI: http://dx.doi.org/10.7567/jjap.53.04eh02
Type: Journal Article/Review
Parent Publication: Japanese Journal of Applied Physics
Issue: 4S