Growth of non-polar (11-20) InGaN quantum dots by metal organic vapour phase epitaxy using a two temperature method (2014)
Attributed to:
Study of semi-polar and non-polar nitride based structures for opto-electronic device applications
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1063/1.4904068
Publication URI: http://dx.doi.org/10.1063/1.4904068
Type: Journal Article/Review
Parent Publication: APL Materials
Issue: 12