Fundamentals of X-ray Diffraction Characterisation of Strain in GaN Based Compounds (2013)
Attributed to:
Study of semi-polar and non-polar nitride based structures for opto-electronic device applications
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.7567/jjap.52.08jb29
Publication URI: http://dx.doi.org/10.7567/jjap.52.08jb29
Type: Journal Article/Review
Parent Publication: Japanese Journal of Applied Physics
Issue: 8S