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Multicharacterization approach for studying InAl(Ga)N/Al(Ga)N/GaN heterostructures for high electron mobility transistors (2014)

First Author: Naresh-Kumar G

Attributed to: Nanoscale characterisation of nitride semiconductor thin films using EBSD, ECCI, CL and EBIC. funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.4903227

Publication URI: http://dx.doi.org/10.1063/1.4903227

Type: Journal Article/Review

Parent Publication: AIP Advances

Issue: 12