Multicharacterization approach for studying InAl(Ga)N/Al(Ga)N/GaN heterostructures for high electron mobility transistors (2014)
Attributed to:
Nanoscale characterisation of nitride semiconductor thin films using EBSD, ECCI, CL and EBIC.
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1063/1.4903227
Publication URI: http://dx.doi.org/10.1063/1.4903227
Type: Journal Article/Review
Parent Publication: AIP Advances
Issue: 12