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Evidence for a defect level above the conduction band edge of InAs/InAsSb type-II superlattices for applications in efficient infrared photodetectors (2015)

First Author: Prins A

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.4919549

Publication URI: http://dx.doi.org/10.1063/1.4919549

Type: Journal Article/Review

Parent Publication: Applied Physics Letters

Issue: 17