📣 Help Shape the Future of UKRI's Gateway to Research (GtR)

We're improving UKRI's Gateway to Research and are seeking your input! If you would be interested in being interviewed about the improvements we're making and to have your say about how we can make GtR more user-friendly, impactful, and effective for the Research and Innovation community, please email gateway@ukri.org.

Evidence for a defect level above the conduction band edge of InAs/InAsSb type-II superlattices for applications in efficient infrared photodetectors (2015)

First Author: Prins A

Attributed to: Exploring Short Wavelength Limits for High Performance Quantum Cascade Lasers funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.4919549

Publication URI: http://dx.doi.org/10.1063/1.4919549

Type: Journal Article/Review

Parent Publication: Applied Physics Letters

Issue: 17