Influence of the GaN barrier thickness on the optical properties of InGaN/GaN multilayer quantum dot heterostructures (2010)

First Author: Davies S
Attributed to:  Spectroscopy and Applications of Nitride Quantum Dots funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.3456392

Publication URI: http://dx.doi.org/10.1063/1.3456392

Type: Journal Article/Review

Parent Publication: Applied Physics Letters

Issue: 25