InGaAsBi alloys on InP for efficient near- and mid-infrared light emitting devices (2013)
Attributed to:
Materials World Network: III-V Bismide Materials for IR and Mid IR Semiconductors
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1063/1.4837615
Publication URI: http://dx.doi.org/10.1063/1.4837615
Type: Journal Article/Review
Parent Publication: Journal of Applied Physics
Issue: 21