Determination of Ga auto-incorporation in nominal InAlN epilayers grown by MOCVD (2014)
Attributed to:
Lighting the Future
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1039/c4tc00480a
Publication URI: http://dx.doi.org/10.1039/c4tc00480a
Type: Journal Article/Review
Parent Publication: Journal of Materials Chemistry C
Issue: 29