Effect of the barrier growth mode on the luminescence and conductivity micron scale uniformity of InGaN light emitting diodes (2015)
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1063/1.4915628
Publication URI: http://dx.doi.org/10.1063/1.4915628
Type: Journal Article/Review
Parent Publication: Journal of Applied Physics
Issue: 11