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Buffer transport mechanisms in intentionally carbon doped GaN heterojunction field effect transistors (2014)

First Author: Uren M

Attributed to: Silicon Compatible GaN Power Electronics funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.4885695

Publication URI: http://dx.doi.org/10.1063/1.4885695

Type: Journal Article/Review

Parent Publication: Applied Physics Letters

Issue: 26