Systematic simulation study of the impact of virtual gate geometry on the current collapse in AlGaN/GaN HEMTs (2009)

First Author: Daniel Balaz
Attributed to:  Novel Time-Resolved Thermal Imaging: AlGaN/GaN Heterostructure Field Effect Transistors funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Type: Conference/Paper/Proceeding/Abstract