Choice of Gate Dielectric on the Performance of Thin Film Transistors based on Indium Zinc Oxide Deposited at Low Temperature (2009)

First Author: Mann M

Attributed to: IKC in Advanced Manufacturing Technologies for Photonics and Electronics - Exploiting Molecular and Macromolecular Materials [MMM] funded by EPSRC

No abstract provided

Type: Conference/Paper/Proceeding/Abstract

Parent Publication: MRS