Impact of the field induced polarization space-charge on the characteristics of AlGaN/GaN HEMT: self-consistent simulation study - Invited (2008)
Attributed to:
Novel Time-Resolved Thermal Imaging: AlGaN/GaN Heterostructure Field Effect Transistors
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Type: Conference/Paper/Proceeding/Abstract