Benchmarking of Thermal Boundary Resistance of GaN-SiC Interfaces for AlGaN/GaN HEMTs: US, European and Japanese Suppliers (2010)
Attributed to:
Novel Time-Resolved Thermal Imaging: AlGaN/GaN Heterostructure Field Effect Transistors
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Type: Conference/Paper/Proceeding/Abstract