Gain Characteristic of Dilute Nitride HELLISH-VCSOA for 1.3 micrometer Wavelength Operation (2013)
Attributed to:
Electrically Pumped Broad Band and Vertical Cavity Semiconductor Dilute Nitride Amplifiers for Metro and Acess Networks
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Type: Conference/Paper/Proceeding/Abstract