Strain engineered InAs/GaAs quantum dots for long wavelength emission

Lead Research Organisation: University of Sheffield
Department Name: Electronic and Electrical Engineering


Submitted by partner institution


10 25 50
Description We developed a clear understanding of the limitations in epitaxial growth of 1550nm QDs on GaAs.
Exploitation Route These materials may find application in 1550nm SESAMs for ultra high speed optical comms.
Sectors Digital/Communication/Information Technologies (including Software),Electronics

Description EPSRC
Amount £48,045 (GBP)
Funding ID EPSRC/UoS Doctoral Prize Fellowship 2011 
Organisation Engineering and Physical Sciences Research Council (EPSRC) 
Sector Academic/University
Country United Kingdom
Start 10/2011 
End 10/2012