New Oxychalcogenides for Electronic, Magnetic and Optical Applications

Lead Research Organisation: Durham University
Department Name: Chemistry

Abstract

Solid state chemistry has impact on many areas of modern life. Examples are numerous: essentially all the petrol we use has been processed using solid state porous catalysts; the fuel cells and rechargeable batteries in modern portable devices rely on materials produced by solid state chemists; metal alloys and metal oxides form key components of all electronic goods. Many of the materials in use today are based on metal oxides. In these materials electronic, optical and magnetic properties are usually controlled by substituting different metal ions in the structure. This influences the electron count in metal-oxygen antibonding bands which in turn changes properties; seemingly minor changes in chemical composition can dramatically change a material's properties. In this proposal we seek funding to investigate the chemistry of oxychalcogenides, phases which simultaneously contain O2- and S2- or Se2- anions. We believe that these materials are exciting for several reasons. Firstly, they are a relatively under-explored family and there are significant opportunities to prepare new materials with properties influenced by the simultaneous presence of two different anions. Secondly, the bonding in such materials is significantly different to that in oxides and the higher degree of covalency leads to a combination of metal and anion character in the highest energy occupied electronic states. This offers the possibility of preparing phases such as p-type transparent conductors and to produce materials with potentially exploitable magnetic properties. Thirdly, it's possible to use the chalcogenide layers in materials to stabilise oxide layers with structural arrangements that aren't found in pure oxide materials. The novel structures of such layers suggest novel electronic and magnetic properties may be discovered and exploited.In one work strand we aim to develop the chemistry of materials related to [Bi2LnO4][Cu2Se2] (Ln is a 3+ lanthanoid element). There are a wide range of chemical substitutions and related materials we hope to prepare with a range of potentially interesting properties. A second strand targets [Ln2O2Q2][M2O] (M is a transition metal) materials which contain an unusual [M2O] layer of atoms which is structurally related to layers found in many important materials but has M and O positions reversed. We wish to explore the range of such materials that can be prepared and investigate their structural, magnetic and electronic properties. A final strand of the work will use our knowledge of the kinds of features found in known oxychalcogenides to target new structure types.In summary, this project will allow us to prepare exciting new materials and investigate their structural, electronic, optical and magnetic properties.

Publications

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Description The aim of the work was to study the properties of oxychalcogenide materials - that is materials that simultaneously contain both an oxide anion and another group 16 anion (here S2- or Se2-). The project was very successful and resulted in a number of scientific publications that are listed elsewhere. We were able to understand the magnetic and electronic properties of a number of materials which were examples of known structure types using a combination of conductivity and magnetic measurements coupled with characterisation techniques such as neutron diffraction, muon measurements and X-ray diffraction.
We were also successful in identifying a new "infinitely adaptive" family of transition metal oxychalcogenides where, in essence, a unique structure type can be built into a material by subtle modifications of its chemical constituents. This type of control of long-range ordering of metal ions in the solid state is extremely unusual. We've also shown, for example, how the properties of some materials can be tuned from semiconducting to insulating by simple chemical means. We are continuing with these areas of research.
The challenges involved in understanding these infinitely adaptive materials led to develop new methods for understanding structures in terms of "occupational distortion modes" with collaborators at Brigham Young University in Utah, and new methods for "Stacking Fault Rietveld Refinement" with collaborators in Australia. These methods will hopefully be of use to other researchers working in different areas of technologically important materials. We've published these methods and provided on-line tutorials to help other researchers learn how to use them.
Several PhD students and post-doctoral researchers worked on the project. The PhDs have gone on to pursue careers in the scientific sector in private industries. The two post-doctoral researchers have gone on to research and teaching positions in Universities.
Exploitation Route We've reported details of the properties of a range of new materials. Their publication in the scientific literature will allow others to exploit their properties.
Sectors Electronics

URL http://community.dur.ac.uk/john.evans/topas_workshop/topas_user_menu.htm
 
Description EPSRC
Amount £361,086 (GBP)
Funding ID EP/J011533/1 
Organisation Engineering and Physical Sciences Research Council (EPSRC) 
Sector Public
Country United Kingdom
Start 04/2012 
End 03/2015