High-resolution Electron Beam Lithography Critical Mass Grant

Lead Research Organisation: University of Leeds
Department Name: Electronic and Electrical Engineering

Abstract

Nanotechnology is a significant enabling research activity at both a national and international level. Concerned with the manipulation and arrangement of material on the nanometre-scale, the transformative possibilities of this field are immense for the physical, biological and medical sciences and their allied industrial and clinical applications. The universities of Leeds, York and Sheffield have an exceptionally strong international record of research and research-led teaching in nanotechnology and represent a strong regional focus in the UK in this field. Much research is carried out collaboratively and inter-disciplinarily in well-resourced and sustainably managed facilities.However, despite the strength of such existing activities, it is clear that certain capabilities require an urgent and substantial transformation if we are to continue to offer internationally competitive research in this field over the next decade. Specifically - and the objective of this proposal - there is a pressing need to establish a state-of-the-art electron-beam lithography machine for fabrication of structures with a <10 nm resolution, with highly reproducible stitching and overlay accuracy <20 nm. The proposed facility would not only be unique in the region, but will also be leading both in the UK and internationally. It will meet the future needs of researchers over the next decade and beyond, allow us to capitalise on previous investments, grow research income from a wide variety of sources, attract and retain the highest calibre staff in the UK, and build a capability to develop a skill-set for ambitious, adventurous and transformative research, and exploitation. Furthermore, it will act as a focus in the region, drawing in researchers from industry and other universities for collaborative programmes. Such direct engagement with industry will open up routes for further investment as well as exploitation of new science and technology. A wide range of research will benefit, much cross-disciplinary; immediate exemplars, drawing upon proven track records of the investigators, include research into nanomagnetism, spintronics, bio-nanotechnology, nanoelectronics, single-molecule devices, and high-frequency electronics, inter alia. During this programme, the facility will be used to support both a range of existing grants, and to underpin future grants, many of which cannot be contemplated without the planned enhancement in capability.Significant contributions to this project (41% of the overall project value) have been secured from the University of Leeds, where the new facility will be based, Yorkshire Forward (the regional development agency), and the electron beam lithography instrument manufacturer. The latter two contributions will be combined to provide funding for 10 PhD studentships to aid uptake of the instrument from researchers across the region, enable pump-priming proving research to be carried out, draw industrial involvement into the project, and increase the availability of skilled personnel at a world leading level to facilitate high technology development. The strong industrial support for this programme is evidenced by letters of intent provided both by international companies (eg Hitachi, Intel, Seagate, Toshiba), and local SMEs (eg Aptuscan).

Planned Impact

The ability to manipulate, control and measure matter routinely on the nanometre scale is creating substantial opportunities both for basic research and for exploitation. It is estimated that by 2015, products incorporating nanotechnology will contribute approximately US$1trillion to the global economy. The UK has about a 10% share of the market, but to retain or grow this share, the UK must maintain a competitive science and engineering platform from which to innovate new products and services. The universities of Leeds, York and Sheffield have an exceptionally strong international record of research, research-led teaching, and the translation of research to end-users in nanotechnology, and represent a substantial regional focus in the UK in this field. While significant infrastructure is available in the region, it is clear that certain capabilities require an urgent and substantial transformation if we are to continue to offer internationally competitive research in this field to the UK over the next decade. There is a pressing need for the region to establish a state-of-the-art electron-beam lithography facility for fabrication of structures with a <10 nm resolution, with highly reproducible stitching and overlay accuracy <20 nm. The regional aspect is underlined by the strong strategic and financial support (300k) to this programme from the regional development agency, Yorkshire Forward, who recognize that it is crucial to maintain world class scientific infrastructure in UK universities both as a means of encouraging new private and publically funded research investment, and to encourage and retain world-leading academic activities. The strong industrial and end-user support for this programme is evidenced by letters of intent provided both by large international companies as well as local SMEs, and this provides a mechanism for translation of research to the end-user community. PhD and PDRA researchers will be trained in the use of the facility and in transferrable skills associated with nanodevice processing, and characterization and measurement techniques, which will increase the availability of skilled scientists in the UK. We will establish a new cohort of 10 PhD studentships over the five-year project, funded by the instrument manufacturer and the Regional Development Agency. Half of these studentships will be used for collaborative projects that include an industrial partner, to help draw end-user involvement into the research, open up routes for further investment into academic programmes, and provide opportunities for researchers to disseminate results to industry, increasing the impact and uptake of their efforts. We will hold six-monthly half-day Workshops, attended by university and industrial personnel involved in the sub-projects. Each year, one of these Workshops will coincide with a Industrial Oversight Meeting, to which representatives from the participating companies, EPSRC, and Yorkshire Forward will be invited, allowing their input into the project for the subsequent year. Two Open Days will also be held to which a wide range of users from industry and academia will be invited. The collaborating universities all have formal structures in place to protect and exploit IP, and to engage users and beneficiaries to increase the likelihood of research impact. For example, at Leeds, the University Research Support and University of Leeds Knowledge and Innovation Unit underpin establishment of research contracts, knowledge- transfer, patents, and licensing issues. The Leeds Faculty of Engineering Keyworth Institute develops links between the Schools' research and development capabilities and appropriate business and industry. The Institute has a dedicated Enterprise Team, who will be fully involved with this project, helping to ensure that potential beneficiaries of research outputs are identified, information is disseminated, and knowledge transferred in the most effective ways possible.

Publications

10 25 50
 
Description Nanotechnology is a significant enabling research activity at both a national and international level. Concerned with the manipulation and arrangement of material on the nanometre-scale, the transformative possibilities of this field are immense for the physical, biological and medical sciences and their allied industrial and clinical applications. The universities of Leeds, York and Sheffield have an exceptionally strong international record of research and research-led teaching in nanotechnology and represent a strong regional focus in the UK in this field. Much research is carried out collaboratively and inter-disciplinarily in well-resourced and sustainably managed facilities.

However, despite the strength of such existing activities, it was clear that certain capabilities required an urgent and substantial transformation if researchers were to continue to offer internationally competitive research in this field over the next decade. Specifically, and the objective of this grant, was addressing the pressing need to establish a state-of-the-art electron-beam lithography machine for fabrication of structures with a <10 nm resolution, with highly reproducible stitching and overlay accuracy <20 nm. The facility that has been established through this award is leading both in the UK and internationally. It meets the needs of current and future researchers over the next decade and beyond, and allows researchers to capitalise on previous investments, grow research income from a wide variety of sources, attract and retain the highest calibre staff in the UK, and build a capability to develop a skill-set for ambitious, adventurous and transformative research, and exploitation. Furthermore, it acts as a focus in the region, drawing in researchers from industry and other universities for collaborative programmes. Such direct engagement with industry is opening up routes for further investment as well as exploitation of new science and technology. A wide range of research is benefiting, much cross-disciplinary; exemplars include research into nanomagnetism, spintronics, bio-nanotechnology, nanoelectronics, single-molecule devices, and high-frequency electronics. The facility is supporting both a range of existing grants, and underpinning future grants, many of which cannot be contemplated without the capability of the electron beam lithography system. The system is thus underpinning state-of-the-art research in the UK over the next decade, and beyond.
Exploitation Route The establishment of a state-of-the-art electron-beam lithography system for fabrication of structures with a less than 10 nm resolution is being extensively used by researchers from the Universities of Leeds, York, and Sheffield, as well as drawing in researchers from industry and other universities for collaborative programmes. The electron-beam lithography system, and the associated nanotechnology cleanroom, form a key part of the investment at the University of Leeds in the Bragg Centre for Materials Research (https://www.leeds.ac.uk/info/130565/bragg_centre_for_materials_research), with external access being provided through the Royce Institute (EP/R00661X/1, EP/S019367/1), and through the Leeds EPSRC Nanoscience and Nanoequipment User Facility (EP/R02863X/1). It is supported by a full-time Experimental Officer, recruited through the award, and now holding a permanent position at the University of Leeds. The electron beam lithography system has provided the underpinning technology that has supported successful EPSRC grant applications, including responsive mode grants EP/J010634, EP/L00285X, EP/K03278X, EP/R00501X/1, EP/M02458X/1, and EP/T006803/1; Platform grant EP/M000923; Programme Grant EP/P021859/1; and, grant submissions to Horizon 2020. It has also enabled a range of patents to be filed on nanostructured devices. Furthermore, it has underpinned the training of more than 50 PhD and early career researchers, which is increasing the availability of skilled personnel at a world leading level to facilitate high technology development.
Sectors Aerospace, Defence and Marine,Digital/Communication/Information Technologies (including Software),Electronics,Manufacturing, including Industrial Biotechology,Pharmaceuticals and Medical Biotechnology,Security and Diplomacy

URL https://www.leeds.ac.uk/info/130565/bragg_centre_for_materials_research/685/bragg_facilities/4
 
Description The high-resolution electron beam lithography has now been used by a number of companies to fabricate sub-micron features, and prototype new device structures; it is also drawing in industrial end users to utilise the more general cleanroom facilities. As one exemplar, the facilities are being used for prototyping photonic circuits for optical computing applications prior to scale-up using commercial foundary facilities.
First Year Of Impact 2019
Sector Digital/Communication/Information Technologies (including Software),Electronics,Healthcare
Impact Types Economic

 
Description Artificial Spin Ice: Designer Matter Far From Equilibrium
Amount £499,427 (GBP)
Funding ID EP/L00285X/1 
Organisation Engineering and Physical Sciences Research Council (EPSRC) 
Sector Public
Country United Kingdom
Start 03/2014 
End 12/2017
 
Description Generation, Imaging and Control of Novel Coherent Electronic States in Artificial Ferromagnetic-Superconducting Hybrid Metamaterials and Devices
Amount £828,093 (GBP)
Funding ID EP/J010634/1 
Organisation Engineering and Physical Sciences Research Council (EPSRC) 
Sector Public
Country United Kingdom
Start 06/2012 
End 11/2016
 
Description Half-metallic ferromagnets: materials fundamentals for next-generation spintronics
Amount £568,816 (GBP)
Funding ID EP/K03278X/1 
Organisation Engineering and Physical Sciences Research Council (EPSRC) 
Sector Public
Country United Kingdom
Start 10/2013 
End 01/2018
 
Description HyperTerahertz - High precision terahertz spectroscopy and microscopy
Amount £6,517,861 (GBP)
Funding ID EP/P021859/1 
Organisation Engineering and Physical Sciences Research Council (EPSRC) 
Sector Public
Country United Kingdom
Start 06/2017 
End 05/2022
 
Description Sir Henry Royce Institute - recurrent grant
Amount £23,057,010 (GBP)
Funding ID EP/R00661X/1 
Organisation Engineering and Physical Sciences Research Council (EPSRC) 
Sector Public
Country United Kingdom
Start 04/2016 
End 03/2021
 
Description Spintronic Devices for Integrated Logic Circuits
Amount £856,918 (GBP)
Funding ID EP/M02458X/1 
Organisation Engineering and Physical Sciences Research Council (EPSRC) 
Sector Public
Country United Kingdom
Start 04/2015 
End 03/2020
 
Description Spintronics at Leeds
Amount £1,476,201 (GBP)
Funding ID EP/M000923/1 
Organisation Engineering and Physical Sciences Research Council (EPSRC) 
Sector Public
Country United Kingdom
Start 10/2014 
End 10/2019
 
Description Synthetic Antiferromagnetic Skyrmions
Amount £815,630 (GBP)
Funding ID EP/T006803/1 
Organisation Engineering and Physical Sciences Research Council (EPSRC) 
Sector Public
Country United Kingdom
Start 09/2019 
End 03/2023
 
Description The Leeds EPSRC Nanoscience and Nanoequipment User Facility
Amount £201,945 (GBP)
Funding ID EP/R02863X/1 
Organisation Engineering and Physical Sciences Research Council (EPSRC) 
Sector Public
Country United Kingdom
Start 05/2018 
End 05/2020
 
Description The Royce: Capitalising on the investment
Amount £1,006,680 (GBP)
Funding ID EP/S019367/1 
Organisation Engineering and Physical Sciences Research Council (EPSRC) 
Sector Public
Country United Kingdom
Start 11/2018 
End 10/2020
 
Description The physics of plasmonic gain in low-dimensional electronic systems
Amount £527,764 (GBP)
Funding ID EP/R00501X/1 
Organisation Engineering and Physical Sciences Research Council (EPSRC) 
Sector Public
Country United Kingdom
Start 12/2017 
End 03/2021
 
Title Dataset associated with 'Vogel-Fulcher-Tammann Freezing of a Thermally Fluctuating Arti cial Spin Ice Probed by X-ray Photon Correlation Spectroscopy' 
Description We report on the crossover from the thermal to athermal regime of an arti cial spin ice formed from a square array of magnetic islands whose lateral size, 30 nm 70 nm, is small enough that they are superparamagnetic at room temperature. We used resonant magnetic soft x-ray photon correlation spectroscopy (XPCS) as a method to observe the time-time correlations of the uctuating magnetic con gurations of spin ice during cooling, which are found to slow abruptly as a freezing temperature T0 = 178 5 K is approached. This slowing is well-described by a Vogel-Fulcher-Tammann law, implying that the frozen state is glassy, with the freezing temperature being commensurate with the strength of magnetostatic interaction energies in the array. The activation temperature, TA = 40 10 K, is much less than that expected from a Stoner-Wohlfarth coherent rotation model. Zero- eld-cooled/ eld-cooled magnetometry reveals a freeing up of uctuations of states within islands above this temperature, caused by variation in the local anisotropy axes at the oxidised edges. This Vogel-Fulcher-Tammann behavior implies that the system enters a glassy state on freezing, which is unexpected for a system with a well-defined ground state.. 
Type Of Material Database/Collection of data 
Year Produced 2017 
Provided To Others? Yes  
 
Title ?? ?? ?? 
Description ?? ?? ??(10)? ??(24)?, ??(24) ?? ???? ????? ????? ?? ???(14)?, ??(24) ?? ????, ????? ?????, ? 1 ?? ??? ?? ???? ?? ?? ???? ?? ?? ???(18)?, ?? ???(14) ? ?? ???(18)? ?? ?? ???? ??? ??? ????? ????? ???(12)?, ?? ???(18)? ?? ???(M)? ? 1 ?(L1)? ??? ?? ????? ? 1 ?(L1)? ??? ?? ??? ??? ??, ?? ???(18)? ?? ???(M)? ? 1 ?(L1)? ???? ? 2 ?(L2)? ?? ?? ??? ?????? ??? ???? ???(30)? ???? 
IP Reference KR20170134570 
Protection Patent granted
Year Protection Granted 2017
Licensed No
Impact None as yet.
 
Title ??????? 
Description ???????10????24????24?????????????????????14????24?????????????????1????????????????????????????18????????14????????18??????????????????????????????12????????18????????M??1?L1????????????1?L1???????????????????????18????????M??1?L1??????2?L2????????????????????????????????30?????? 
IP Reference JPWO2016190255 
Protection Patent granted
Year Protection Granted 2018
Licensed No
Impact We plan to fabricate a device using this patent.
 
Title ???????? 
Description ??????????????12????????????????16???????????????14??????????????10???????????16????????12???????????????????14????????12????????16??????????????????????14??????????????????????????????30?34????????? 
IP Reference JPWO2014073452 
Protection Patent granted
Year Protection Granted 2016
Licensed No
Impact Toshiba showed some interest.
 
Title ????????????? 
Description ?1?????????????????????????????????????1?????????????????????????????????????????????????????????????????????????????????????????????????????????????????????????????? 
IP Reference JPWO2014027555 
Protection Patent granted
Year Protection Granted 2016
Licensed No
Impact We have been fabricating a device using this patent.
 
Title ??????????????? 
Description ???????????????????????????????????????????????????????????????????????????????????????????????????????????????????????????????????????????????????????????????????????????????????????????????????????????????? 
IP Reference JPWO2014024697 
Protection Patent granted
Year Protection Granted 2016
Licensed No
Impact This patent was highlighted during the MRS meeting in Boston.
 
Title ???????????????? 
Description ????????????????1????????????????????????????????????????1?????????????????????????????????????????1????????????????????????????????????????????????????? 
IP Reference JPWO2015064663 
Protection Patent granted
Year Protection Granted 2017
Licensed No
Impact We have been fabricating a device using this patent.
 
Title LATERAL SPIN VALVE ELEMENT 
Description A spin valve element 10 including a spin injector 12 made of a ferromagnetic material, a spin detector 16 made of a ferromagnetic material, and a channel part 14 made of a non-magnetic material. The spin detector 16 is arranged at a position separated from the spin injector 12, the channel part 14 is connected with the spin injector 12 and the spin detector 16 directly or through an insulating layer, and a plurality of spin diffusion portions 30 to 34 with enlarged cross section areas in a direction perpendicular to a spin current is formed in the channel part 14. 
IP Reference EP2919274 
Protection Patent granted
Year Protection Granted 2015
Licensed No
Impact There are several companies interested in this patent.
 
Title METHOD OF PINNING DOMAIN WALLS IN A NANOWIRE MAGNETIC MEMORY DEVICE 
Description There is provided a method of pinning domain walls in a magnetic memory device (10) comprising using an antiferromagnetic material to create domain wall pinning sites. Junctions (22) where arrays of ferromagnetic nanowires (16) and antiferromagnetic nanowires (20) cross exhibit a permanent exchange bias interaction between the ferromagnetic material and the antiferromagnetic material which creates domain wall pinning sites. The exchange bias field is between 30 to 3600 Oe and the anisotropy direction of the ferromagnetic elements is between 15 to 75° to an anisotropy direction of the antiferromagnetic elements. 
IP Reference US2014355337 
Protection Patent granted
Year Protection Granted 2014
Licensed No
Impact We have been discussing with IBM.
 
Title Method of pinning domain walls in a nanowire magnetic memory device 
Description A method of pinning domain walls in a magnetic memory device (10), comprising the use of an antiferromagnetic material in conjunction with a ferromagnetic material to create domain wall pinning sites. Junctions (22) where arrays of ferromagnetic nanowires (16) and antiferromagnetic nanowires (20) cross exhibit a permanent exchange bias interaction between the ferromagnetic material and the antiferromagnetic material which creates domain wall pinning sites. The exchange bias field Hex is between 30 to 3600 Oersteds (Oe) and the anisotropy direction of the ferromagnetic elements is between 15 to 75° to an anisotropy direction of the antiferromagnetic elements. The magnetic memory may operate as a magnetic shift register. 
IP Reference GB2495614 
Protection Patent granted
Year Protection Granted 2013
Licensed No
Impact We have been in discussion with IBM.
 
Title PULSE GENERATION DEVICE 
Description A pulse generation device 10 includes a substrate 24, a spin injector 14 provided on the substrate 24 and made of a ferromagnetic body, a spin rotor 18 provided on the substrate 24, made of a ferromagnetic body, and having magnetic anisotropy in which a direction of a first axis becomes an easy axis of magnetization, a channel portion 12 made of a nonmagnetic body, and joined with the spin injector 14 and the spin rotor 18 directly or via an insulating layer, and a generating portion 30 configured to generate a pulse by detecting, when a magnetic moment M of the spin rotor 18 is reversed from a state in which the magnetic moment M faces one side of the first axis to a state in which the magnetic moment M faces the other side of the first axis L1, a state in which the magnetic moment M of the spin rotor 18 faces a direction along a second axis L2 orthogonal to the first axis L1. 
IP Reference EP3300120 
Protection Patent granted
Year Protection Granted 2018
Licensed No
Impact None as yet.
 
Title Pulse generation device 
Description A pulse generation device 10 is provided with: a substrate 24; a spin injector 14 disposed on the substrate 24 and comprising a ferromagnetic material; a spin rotor 18 disposed on the substrate 24 and comprising a ferromagnetic material, the spin rotor 18 having magnetic anisotropy such that the direction of a first axis provides an axis of easy magnetization; a channel portion 12 comprising a non-magnetic material and which is bonded to the spin injector 14 and the spin rotor 18 either directly or via an insulating layer; and a generation portion 30 which generates a pulse by detecting a state in which, when a magnetic moment M of the spin rotor 18 is inverted from a state of pointing in one direction of the first axis L1 to a state of pointing in the other direction of the first axis L1, the magnetic moment M of the spin rotor 18 is pointing along a second axis L2 perpendicular to the first axis L1. 
IP Reference TW201705567 
Protection Patent granted
Year Protection Granted 2017
Licensed No
Impact None as yet
 
Title SPIN CONTROL MECHANISM AND SPIN DEVICE 
Description A spin control mechanism includes a spin portion and a first channel portion. The spin portion has a magnetic moment that can be reversed and rotated. The first channel portion is provided in contact with the spin portion, and is configured from ferromagnetic insulator. Then, the spin control mechanism controls a direction of the magnetic moment of the spin portion using a spin current generated by a temperature gradient provided to the first channel portion. 
IP Reference US2016268497 
Protection Patent granted
Year Protection Granted 2016
Licensed No
Impact We have been fabricating a device.
 
Title SPIN CONTROL MECHANISM AND SPIN DEVICE 
Description A spin control mechanism incudes a spin portion and a first channel portion. The spin portion has a magnetic moment that can be reversed and rotated. The first channel portion is provided in contact with the spin portion, and is configured from ferromagnetic insulator. Then, the spin control mechanism controls a direction of the magnetic moment of the spin portion using a spin current generated by a temperature gradient provided to the first channel portion. 
IP Reference EP3065181 
Protection Patent granted
Year Protection Granted 2016
Licensed No
Impact None as yet.
 
Title SPIN MOTOR AND ROTARY MEMBER 
Description A spin rotary member includes a substrate, a spin injector made of a ferromagnetic material magnetized in a substrate in-plane direction, and provided on the substrate, a spin rotor made of a ferromagnetic material having a magnetic moment rotatable in the substrate in-plane direction, and provided on the substrate, being separated from the spin injector, a channel part made of a non-magnetic material, arranged between the spin injector and the spin rotor, and bonded with the spin injector and the spin rotor directly or through an insulating layer, and a spin rotation control part configured to control a rotation direction of spin of the channel part. 
IP Reference US2015229169 
Protection Patent granted
Year Protection Granted 2015
Licensed No
Impact We have been fabricating a device.
 
Title SPIN MOTOR AND SPIN ROTARY MEMBER 
Description A spin rotary member includes a substrate, a spin injector made of a ferromagnetic material magnetized in a substrate in-plane direction, and provided on the substrate, a spin rotor made of a ferromagnetic material having a magnetic moment rotatable in the substrate in-plane direction, and provided on the substrate, being separated from the spin injector, a channel part made of a non-magnetic material, arranged between the spin injector and the spin rotor, and bonded with the spin injector and the spin rotor directly or through an insulating layer, and a spin rotation control part configured to control a rotation direction of spin of the channel part. 
IP Reference EP2884654 
Protection Patent granted
Year Protection Granted 2015
Licensed No
Impact The patent was highlighted at MRS meeting in Boston.
 
Title SPIN POLARIZATION TRANSISTOR ELEMENT 
Description There are provided with a source part made of a ferromagnetic material magnetized in a first direction, a drain part made of a ferromagnetic material magnetized in the first direction, and separated from and arranged in parallel to the source part, a channel part arranged between the source part and the drain part, and bonded with the source part and the drain part directly or through a tunnel layer, and a circularly polarized light irradiation part that irradiates the channel part with circularly polarized light for controlling a direction of spin of the channel part. 
IP Reference US2015200282 
Protection Patent granted
Year Protection Granted 2015
Licensed No
Impact We have been fabricating a device using this patent.
 
Title SPIN VALVE ELEMENT 
Description A spin valve element 10 including a spin injector 12 made of a ferromagnetic material, a spin detector 16 made of a ferromagnetic material, and a channel part 14 made of a non-magnetic material. The spin detector 16 is arranged at a position separated from the spin injector 12, the channel part 14 is connected with the spin injector 12 and the spin detector 16 directly or through an insulating layer, and a plurality of spin diffusion portions 30 to 34 with enlarged cross section areas in a direction perpendicular to a spin current is formed in the channel part 14. 
IP Reference US2015311428 
Protection Patent granted
Year Protection Granted 2015
Licensed No
Impact Toshiba showed some interest.
 
Title Self-spin polarization transistor device 
Description The present invention includes: a source part formed by a ferromagnetic substance magnetized in a first direction; a drain part separately arranged with the source part side by side and formed by a ferromagnetic substance magnetized in a first direction; a channel part configured between the source part and the drain part and connected to the source part and the drain part directly or through a tunneling layer; and a circular polarized illumination part for emitting the circular polarized light of self-spin orientation used for controlling the channel part toward the channel part. In addition, the channel part is made of semiconductor material, and the circular polarized illumination part emits the circular polarized light with a wavelength having energy higher than the energy band gap of the channel part. 
IP Reference TW201413965 
Protection Patent granted
Year Protection Granted 2014
Licensed No
Impact We have been fabricating a device.
 
Title Spin control mechanism and spin device 
Description A spin control mechanism is provided with a spin section and a first channel section. The spin section has a reversible or rotatable magnetic moment. The first channel section is provided so as to be in contact with the spin section, is ferromagnetic, and is configured from an insulator. A spin current that is generated by a temperature gradient that is applied to the first channel section is used to control the orientation of the magnetic moment of the spin section. 
IP Reference TW201521189 
Protection Patent granted
Year Protection Granted 2015
Licensed No
Impact We have been fabricating a device.
 
Title Spin motor and spin rotary member 
Description A spin rotary member is provided with: a substrate; a spin injector provided on the substrate, the spin injector comprising a ferromagnet magnetized in the planar direction of the substrate; a spin rotor provided on the substrate apart from the spin injector, the spin rotor comprising a ferromagnet for which the magnetic moment can rotate in the planar direction of the substrate; a channel unit arranged between the spin injector and the spin rotor, the channel unit comprising a nonmagnetic body joined to the spin injector and the spin rotor directly or with an insulating layer interposed therebetween; and a spin rotation control unit for controlling the direction of spin rotation of the channel unit. 
IP Reference TW201414175 
Protection Patent granted
Year Protection Granted 2014
Licensed No
Impact We have been fabricating a device.
 
Title Spin valve element 
Description A spin valve element (10) which has: a spin injector (12) comprising a ferromagnetic body; a spin detector (16) comprising a ferromagnetic body; and a channel (14) comprising a non-magnetic body. The spin detector (16) is disposed at a position separate from the spin injector (12), the channel part (14) is connected to the spin injector (12) and the spin detector (16) either directly or via an insulating layer, and spin diffusion parts (30-34) having an enlarged cross-sectional area in the direction orthogonal to the spin current are formed in the channel part (14). 
IP Reference TW201431093 
Protection Patent granted
Year Protection Granted 2014
Licensed No
Impact Toshiba showed some interest.