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GaAsP-GaAs nanowire quantum dots for novel quantum emitters

Lead Research Organisation: UNIVERSITY COLLEGE LONDON
Department Name: Electronic and Electrical Engineering

Abstract

Abstracts are not currently available in GtR for all funded research. This is normally because the abstract was not required at the time of proposal submission, but may be because it included sensitive information such as personal details.

Publications

10 25 50
 
Description 1. Controlled and reproducible doping is essential for nanowires (NWs) to realize their functions. In this project, the doping mechanism of self-catalyzed NWs and the influence of self-catalytic droplets on the doping process are systematically studied This study is an essential step toward the design and fabrication of nanowire devices.

2. The growth of self-catalyzed core-shell NWs is investigated systematically using GaAs(P) NWs. The defects in the core NW are found to be detrimental for the shell growth. These defects are effectively eliminated by introducing beryllium (Be) doping during the NW core growth. Shells with pure zinc-blende crystal quality and highly regular morphology are successfully grown on the defect-free NW cores. These results provide useful information on guiding the growth of high-quality shell, which can greatly enhance the NW device performance.

3. Nanowire QW laser was achieved with record low threshold.

4. Nanowire quantum well structures have been developed as promising candidate for nanowire lasers.
Exploitation Route These findings will enable high-qiality Nanowire materials and devices possible. We developed high-quality GaAs/GaAsP quantum-well nanowire emitters, including single-photon emitter and lasers. These devices could be potentially used in quantum technology and lighting areas.
Sectors Digital/Communication/Information Technologies (including Software)

Electronics

Energy

 
Description A National Research Facility for Epitaxy
Amount £12,250,477 (GBP)
Funding ID EP/X015300/1 
Organisation Engineering and Physical Sciences Research Council (EPSRC) 
Sector Public
Country United Kingdom
Start 05/2022 
End 06/2027
 
Description EPSRC Centre for Doctoral Training in Compound Semiconductor Manufacturing
Amount £6,589,026 (GBP)
Funding ID EP/S024441/1 
Organisation Engineering and Physical Sciences Research Council (EPSRC) 
Sector Public
Country United Kingdom
Start 05/2019 
End 12/2027
 
Description EPSRC Future Manufacturing Hub
Amount £10,330,423 (GBP)
Funding ID EP/P006973/1 
Organisation Engineering and Physical Sciences Research Council (EPSRC) 
Sector Public
Country United Kingdom
Start 09/2016 
End 09/2023
 
Description H2020-MSCA-ITN-2016 Marie Sklodowska-Curie Innovative Training Networks
Amount € 1,000,000 (EUR)
Organisation European Commission 
Department Horizon 2020
Sector Public
Country European Union (EU)
Start 01/2017 
End 12/2020
 
Description National Epitaxy Facility
Amount £12,000,000 (GBP)
Organisation Engineering and Physical Sciences Research Council (EPSRC) 
Sector Public
Country United Kingdom
Start 01/2017 
End 12/2021
 
Description Phosphide-based nanowires for visible and near-infrared miniature photon emitters
Amount £940,501 (GBP)
Funding ID EP/W002302/1 
Organisation Engineering and Physical Sciences Research Council (EPSRC) 
Sector Public
Country United Kingdom
Start 03/2022 
End 04/2025
 
Title Analysed Data for Nanoskived GaAsP/GaAs Heterostructures: PL Spectra Fit Parameters, Geometrical Data from SEM, Transition Energies from Nextnano Simulations 
Description This dataset is used in the research "Improving Quantum Well Tube Homogeneity Using Strained Nanowire Heterostructures". It underpins the findings that the radial quantum well heterostructure, specifically the GaAsP/GaAs core/shell, configuration is able to host highly strained systems that improve optoelectronic homogeneity with a reduced dependence on overall morphological variations. h5 dataset containing 3 groups of analysed data: Photoluminescence (PL) map fitting data: Lasher-Stern-Wurfel (LSW) fitting parameters, coordinates of individual heterostructures within PL map, raw PL spectra and corresponding LSW fitted curves Data from analysed Scanning Electron Microscopy (SEM) images including diameters, coordinates of individual structures, solidity and eccentricity of detected heterostructures Transitions energies from nextnano simulations for 10 eigenvalues at a series of quantum well (QW) widths, L, from L = 3 to 12 nm at differing phosphorous concentrations (P = 44%, 47% and 50%) in the strained systems and in an unstrained system for comparison. Analysis scripts (MATLAB) are also provided, with a readme.txt file for instructions on how to use and replicate figures from the associated manuscript. 
Type Of Material Database/Collection of data 
Year Produced 2023 
Provided To Others? Yes  
Impact It underpins the findings that the radial quantum well heterostructure, specifically the GaAsP/GaAs core/shell, configuration is able to host highly strained systems that improve optoelectronic homogeneity with a reduced dependence on overall morphological variations. 
URL https://figshare.manchester.ac.uk/articles/dataset/Analysed_Data_for_Nanoskived_GaAsP_GaAs_Heterostr...
 
Title Analysed Data for Nanoskived GaAsP/GaAs Heterostructures: PL Spectra Fit Parameters, Geometrical Data from SEM, Transition Energies from Nextnano Simulations 
Description This dataset is used in the research "Improving Quantum Well Tube Homogeneity Using Strained Nanowire Heterostructures". It underpins the findings that the radial quantum well heterostructure, specifically the GaAsP/GaAs core/shell, configuration is able to host highly strained systems that improve optoelectronic homogeneity with a reduced dependence on overall morphological variations. h5 dataset containing 3 groups of analysed data: Photoluminescence (PL) map fitting data: Lasher-Stern-Wurfel (LSW) fitting parameters, coordinates of individual heterostructures within PL map, raw PL spectra and corresponding LSW fitted curves Data from analysed Scanning Electron Microscopy (SEM) images including diameters, coordinates of individual structures, solidity and eccentricity of detected heterostructures Transitions energies from nextnano simulations for 10 eigenvalues at a series of quantum well (QW) widths, L, from L = 3 to 12 nm at differing phosphorous concentrations (P = 44%, 47% and 50%) in the strained systems and in an unstrained system for comparison. Analysis scripts (MATLAB) are also provided, with a readme.txt file for instructions on how to use and replicate figures from the associated manuscript. 
Type Of Material Database/Collection of data 
Year Produced 2023 
Provided To Others? Yes  
Impact This research dataset is highly valuable for identifying high-quality devices with a substantial number of samples. 
URL https://figshare.manchester.ac.uk/articles/dataset/Analysed_Data_for_Nanoskived_GaAsP_GaAs_Heterostr...
 
Title Imagery, Spectra, and SEM 
Description The dataset containing 2 groups of data: 1. Photoluminescence (PL) map fitting data (Lasher-Stern Werfel (LSW) fitting parameters, coordinates of individual heterostructures within PL map, raw PL spectra and corresponding LSW fitted curves) 2. Data from analysed Scanning Electron Microscopy (SEM) images (diameters, coordinates of individual structures, solidity and eccentricity of detected heterostructures) 
Type Of Material Database/Collection of data 
Year Produced 2023 
Provided To Others? Yes  
Impact This dataset underpins the measurement of intrawire and interwire disorder for GaAs/GaAsP nanowire segments. It shows that highly homogeneous emission can be achieved through strain management in quantum well systems. 
URL https://figshare.manchester.ac.uk/articles/dataset/Research_Data_for_Improving_Quantum_Well_Tube_Hom...