GaAsP-GaAs nanowire quantum dots for novel quantum emitters
Lead Research Organisation:
University College London
Department Name: Electronic and Electrical Engineering
Abstract
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Organisations
People |
ORCID iD |
Huiyun Liu (Principal Investigator) |
Publications
Ali H
(2018)
High-Responsivity Photodetection by a Self-Catalyzed Phase-Pure p-GaAs Nanowire.
in Small (Weinheim an der Bergstrasse, Germany)
Boras G
(2021)
Self-Catalyzed AlGaAs Nanowires and AlGaAs/GaAs Nanowire-Quantum Dots on Si Substrates.
in The journal of physical chemistry. C, Nanomaterials and interfaces
Boras G
(2020)
Checked patterned elemental distribution in AlGaAs nanowire branches via vapor-liquid-solid growth.
in Nanoscale
Boras G
(2019)
III-V ternary nanowires on Si substrates: growth, characterization and device applications
in Journal of Semiconductors
Chan S
(2019)
Investigation into the current loss in InAs/GaAs quantum dot solar cells with Si-doped quantum dots
in Journal of Physics D: Applied Physics
Chen C
(2023)
Initialization of Nanowire or Cluster Growth Critically Controlled by the Effective V/III Ratio at the Early Nucleation Stage
in The Journal of Physical Chemistry Letters
Choi H
(2020)
Visualizing the role of photoinduced ion migration on photoluminescence in halide perovskite grains
in Journal of Materials Chemistry C
Church S.
(2022)
Disentangling Gain, Distributed Losses and End-Facet Losses in Freestanding Nanowire Lasers using Automated High-Throughput Micro-Spectroscopy
in Optics InfoBase Conference Papers
Cui F
(2021)
Robust Protection of III-V Nanowires in Water Splitting by a Thin Compact TiO2 Layer.
in ACS applied materials & interfaces
Fonseka A
(2020)
GaAsP nanowires containing intentional and self-forming quantum dots
Fonseka H
(2020)
Multiple radial phosphorus segregations in GaAsP core-shell nanowires
in Nano Research
Fonseka HA
(2019)
Self-Formed Quantum Wires and Dots in GaAsP-GaAsP Core-Shell Nanowires.
in Nano letters
Gott JA
(2019)
Defect Dynamics in Self-Catalyzed III-V Semiconductor Nanowires.
in Nano letters
Hou Q
(2023)
Different Doping Behaviors of Silicon in Zinc Blende and Wurtzite GaAs Nanowires: Implications for Crystal-Phase Device Design
in ACS Applied Nano Materials
Jurczak P
(2017)
Ten-Fold Enhancement of InAs Nanowire Photoluminescence Emission with an InP Passivation Layer.
in Nano letters
Li X
(2021)
Optimizing GaAs nanowire-based visible-light photodetectors
in Applied Physics Letters
Liu Z
(2020)
Origin of Defect Tolerance in InAs/GaAs Quantum Dot Lasers Grown on Silicon
in Journal of Lightwave Technology
Mann SA
(2017)
Integrating Sphere Microscopy for Direct Absorption Measurements of Single Nanostructures.
in ACS nano
Patel N
(2023)
Improving Quantum Well Tube Homogeneity Using Strained Nanowire Heterostructures
in ACS Applied Materials & Interfaces
Rybchenko S
(2021)
Resonant enhancement of Raman scattering by surface phonon polaritons in GaAs nanowires
in Journal of Physics D: Applied Physics
Rybchenko S
(2021)
Polarization properties of Raman scattering by surface phonon polaritons in GaAsP nanowires
in Journal of Physics D: Applied Physics
Sanchez AM
(2018)
Stable Defects in Semiconductor Nanowires.
in Nano letters
Sanchez AM
(2017)
Nonradiative Step Facets in Semiconductor Nanowires.
in Nano letters
Sivan A
(2021)
Influence of diameter on temperature dynamics of hot carriers in photoexcited GaAsP nanowires
in Physical Review B
Skalsky S
(2020)
Heterostructure and Q-factor engineering for low-threshold and persistent nanowire lasing.
in Light, science & applications
Tang M
(2019)
Integration of III-V lasers on Si for Si photonics
in Progress in Quantum Electronics
Valente J
(2018)
Light-Emitting GaAs Nanowires on a Flexible Substrate.
in Nano letters
Wu J
(2016)
Defect-Free Self-Catalyzed GaAs/GaAsP Nanowire Quantum Dots Grown on Silicon Substrate.
in Nano letters
Xu H
(2018)
High Detectivity and Transparent Few-Layer MoS2 /Glassy-Graphene Heterostructure Photodetectors.
in Advanced materials (Deerfield Beach, Fla.)
Yu P
(2019)
Nanowire Quantum Dot Surface Engineering for High Temperature Single Photon Emission.
in ACS nano
Zeng H
(2020)
Preferred growth direction of III-V nanowires on differently oriented Si substrates.
in Nanotechnology
Zeng H
(2018)
Hybrid III-V/IV Nanowires: High-Quality Ge Shell Epitaxy on GaAs Cores.
in Nano letters
Zhang X
(2021)
Design of high-quality reflectors for vertical III-V nanowire lasers on Si.
in Nanotechnology
Zhang Y
(2020)
Self-catalyzed GaAs(P) nanowires and their application for solar cells
in Journal of Physics D: Applied Physics
Zhang Y
(2016)
Influence of Droplet Size on the Growth of Self-Catalyzed Ternary GaAsP Nanowires.
in Nano letters
Zhang Y
(2019)
Toward electrically driven semiconductor nanowire lasers.
in Nanotechnology
Zhang Y
(2017)
Growth of Pure Zinc-Blende GaAs(P) Core-Shell Nanowires with Highly Regular Morphology.
in Nano letters
Zhang Y
(2022)
Thermally-driven formation method for growing (quantum) dots on sidewalls of self-catalysed thin nanowires.
in Nanoscale horizons
Zhang Y
(2021)
Defect-Free Axially Stacked GaAs/GaAsP Nanowire Quantum Dots with Strong Carrier Confinement.
in Nano letters
Zhang Y
(2018)
Doping of Self-Catalyzed Nanowires under the Influence of Droplets.
in Nano letters
Zhang Y
(2019)
Nanowires for High-Efficiency, Low-Cost Solar Photovoltaics
in Crystals
Zhang Y
(2020)
Droplet manipulation and horizontal growth of high-quality self-catalysed GaAsP nanowires
in Nano Today
Zhang Y
(2019)
Growth and Fabrication of High-Quality Single Nanowire Devices with Radial p-i-n Junctions.
in Small (Weinheim an der Bergstrasse, Germany)
Zhang Y
(2019)
Highly Strained III-V-V Coaxial Nanowire Quantum Wells with Strong Carrier Confinement.
in ACS nano
Description | 1. Controlled and reproducible doping is essential for nanowires (NWs) to realize their functions. In this project, the doping mechanism of self-catalyzed NWs and the influence of self-catalytic droplets on the doping process are systematically studied This study is an essential step toward the design and fabrication of nanowire devices. 2. The growth of self-catalyzed core-shell NWs is investigated systematically using GaAs(P) NWs. The defects in the core NW are found to be detrimental for the shell growth. These defects are effectively eliminated by introducing beryllium (Be) doping during the NW core growth. Shells with pure zinc-blende crystal quality and highly regular morphology are successfully grown on the defect-free NW cores. These results provide useful information on guiding the growth of high-quality shell, which can greatly enhance the NW device performance. 3. Nanowire QW laser was achieved with record low threshold. 4. Nanowire quantum well structures have been developed as promising candidate for nanowire lasers. |
Exploitation Route | These findings will enable high-qiality Nanowire materials and devices possible. We developed high-quality GaAs/GaAsP quantum-well nanowire emitters, including single-photon emitter and lasers. These devices could be potentially used in quantum technology and lighting areas. |
Sectors | Digital/Communication/Information Technologies (including Software),Electronics,Energy |
Description | EPSRC Centre for Doctoral Training in Compound Semiconductor Manufacturing |
Amount | £6,589,026 (GBP) |
Funding ID | EP/S024441/1 |
Organisation | Engineering and Physical Sciences Research Council (EPSRC) |
Sector | Public |
Country | United Kingdom |
Start | 06/2019 |
End | 12/2027 |
Description | EPSRC Future Manufacturing Hub |
Amount | £10,330,423 (GBP) |
Funding ID | EP/P006973/1 |
Organisation | Engineering and Physical Sciences Research Council (EPSRC) |
Sector | Public |
Country | United Kingdom |
Start | 10/2016 |
End | 09/2023 |
Description | H2020-MSCA-ITN-2016 Marie Sklodowska-Curie Innovative Training Networks |
Amount | € 1,000,000 (EUR) |
Organisation | European Commission |
Department | Horizon 2020 |
Sector | Public |
Country | European Union (EU) |
Start | 01/2017 |
End | 12/2020 |
Description | National Epitaxy Facility |
Amount | £12,000,000 (GBP) |
Organisation | Engineering and Physical Sciences Research Council (EPSRC) |
Sector | Public |
Country | United Kingdom |
Start | 01/2017 |
End | 12/2021 |
Description | Phosphide-based nanowires for visible and near-infrared miniature photon emitters |
Amount | £940,501 (GBP) |
Funding ID | EP/W002302/1 |
Organisation | Engineering and Physical Sciences Research Council (EPSRC) |
Sector | Public |
Country | United Kingdom |
Start | 04/2022 |
End | 04/2025 |