MOSQUITO: MObile Spin-based QUantum Information sTOrage

Lead Research Organisation: Heriot-Watt University
Department Name: Sch of Engineering and Physical Science

Abstract

Devices exploiting the principles of quantum mechanics can revolutionize the way we communicate, compute and measure. For example, communication links based on the exchange of single photons can generate secret encryption keys, detecting the presence of possible eavesdroppers. As for classical communication networks, quantum networks require local memories and processing units to store and process information.

MOSQUITO investigates the physics related to the demonstration of a portable multi-qubit quantum networking node based on a compact and scalable silicon carbide (SiC) device. The device enables efficient storage of optical quantum states onto nuclear spins at cryogenic temperature, preserves them up to ambient conditions and is accessible at room temperature.
The envisioned integrated device operates in the near-infrared optical region (close to telecom wavelength) and embeds for the first time spintronic, electronic and photonic functionalities on a single platform compatible with standard industrial processing. This break-through is enabled by the unique properties of silicon carbide, which features colour centres with excellent spin coherence, a bright spin/photon interface and established growth and nano-fabrication techniques.

MOSQUITO will open the way to integrated quantum repeaters compatible with telecom networks. Additionally, it will lay the foundations for portable quantum networking nodes, a technology that could facilitate real-world deployment of quantum-enhanced communication security.

Planned Impact

Short-term (< 5years): the semiconductor industry
On the shorter term, this project will mostly impact the semiconductor industry. First of all, my work will improve the understanding of the structure of defects that affect the performance of microelectronic devices. While this is currently studied by theoretical simulations and measurements on large ensembles of defects, my work on single-defect optical spectroscopy are already providing novel information that is averaged out in ensemble experiments. As an example, the long debate in the SiC community about the exact structure of the silicon vacancy defect has only been settled thanks to our recent studies on individual vacancies.
This scientific goals of the project can only be reached by integrating, for the first time, photonic, electronic and spintronic functionalities on a single quantum device. This will require tackling several technological challenges that will push further what can be achieved in a material platform of wide industrial interest. For example, the research line on nano-photonic functionalities can provide new insights and ideas that can find applications also in "classical" photonics. Or, my proposed work on p-i-n junctions operating at cryogenic temperature is relevant for the power electronics effort aimed at integrating power devices with superconducting elements. Additionally this work will drive materials scientists to developp high-purity material, where spin coherence is not limited by interaction with unwanted defects and impurities.
Finally, PhD students and post-docs working on the project will acquire expertise in semiconductor physics, optics, electron spin resonance, high-speed electronics, cryogenics, programming and data analysis. This will help create a skilled work-force for academia and high-tech industry.

Medium-term (5-15 years): portable quantum networking links
In the medium term, portable quantum networking links will facilitate the deployment of secret quantum encryption keys into the real-world, including locations which do not include a specialized fiber link. For example, one could envision encoding photonic quantum states on the portable node in a cryogenic docking station and then physically transporting the device to a different location, while preserving the established entanglement. This can have a ground-breaking impact in extending the range of quantum communication,
While focusing on quantum networking, the techniques developed within this project may in parallel impact the field of spin-based quantum sensing. Single spins are the smallest possible magnetic field sensors, and experiments with nitrogen-vacancy centres in diamond are already providing high measurement sensitivity at the ultimate limits of spatial resolution, for materials science and biological applications.

Long-term (>20 years): global satellite-based quantum communication
The output of this project, integrated with the small low-power cryo-coolers developed by the Science & Technology Facilities Council (with Honeywell-Hymatic) will provide the basis for satellite-based quantum repeaters. Such devices will dramatically extend the range of secure quantum communication, potentially connecting any two locations in the world by combining space optical links, quantum memories and quantum error correction.

The general public
Throughout the activities outlined in "Pathways to Impact", the public will gain awareness of the latest results in quantum physics, the promises of quantum technology and the impact of my own work. This will set them in a position to make conscious informed choices regarding why these activities are worth the taxpayer support.

Publications

10 25 50
 
Description This project focuses on demonstrating a quantum repeater architecture based on single spins in silicon carbide, a semiconductor of wide technological interest for micro-electronics. The quantum repeater holds the promise to increase the link distance for quantum communication, opening the way to secure networking.

With this project, we have achieved several milestones towards this goal, including:
1) demonstration of high-fidelity spin initialisation and control for single defects in silicon carbide, by resonant laser excitation at low temperature. High-fidelity spin control is essential to implement high-quality quantum logic gates for the quantum repeater.
2) demonstration of charge-state control through a micro-electronic device. By using a p-I-n diode structure, we managed to control the number of electrons associated to the defect. This is crucial to implement a quantum memory protected against environmental noise

In parallel we have also investigate novel quantum emitters (related to vanadium impurities) in silicon carbide, which emit in the telecommunication range
Exploitation Route Our data is very helpful for anybody working on quantum technology based on spins in silicon carbide. In addition, the technqiues we use can be easily extended to other spin-based quantum systems.
Sectors Digital/Communication/Information Technologies (including Software),Electronics

 
Description We have developed a novel fabrication process to create 2.5D microstructures in SiC using grayscale lithography. By using a double-mask process and direct laser writing, we are able to fabricate structures such as hemispherical solid immersion lenses. We have applied for a patent for the process. We are discussing with optical communication companies how this process could impact their products.
First Year Of Impact 2023
Sector Digital/Communication/Information Technologies (including Software)
Impact Types Economic

 
Description Connectorising Integrated Quantum Photonics Devices
Amount £300,000 (GBP)
Funding ID 78757 
Organisation Innovate UK 
Sector Public
Country United Kingdom
Start 04/2021 
End 03/2024
 
Description Harnessing Quantum Defects For Magnetic Measurements
Amount £431,918 (GBP)
Funding ID RPG-2019-388 
Organisation The Leverhulme Trust 
Sector Charity/Non Profit
Country United Kingdom
Start 06/2020 
End 05/2024
 
Description Quantum Emitters for Telecommunication in the O-Band
Amount € 2,990,576 (EUR)
Funding ID 862721 
Organisation European Commission 
Sector Public
Country European Union (EU)
Start 10/2019 
End 09/2022
 
Description Collaboration on high-purity SiC material 
Organisation Linkoping University
Department University Medical School Linkoping
Country Sweden 
Sector Academic/University 
PI Contribution I have characterized SiC samples provided my collaborators, using state-of-the-art quantum techniques
Collaborator Contribution My partners are world leaders in the development of SiC material and devices. They have provided several samples, including: - a-plane SiC with isolated Si vacancies - c-plane SiC sample with isolated divacancy - pin diode structures
Impact R Nagy et al, Quantum properties of dichroic silicon vacancies in silicon carbide, Physical Review Applied 9 (3), 034022 (2018) this collaboration is multi-disciplinary, involving quantum spintronics and materials science
Start Year 2017
 
Description Collaboration on low-temperature spectroscopy of single VSi defects in SiC 
Organisation University of Stuttgart
Country Germany 
Sector Academic/University 
PI Contribution The goal of this collaboration is to create a synergy between my expertise on low-temperature spectroscopy of defects and Stuttgart's expertise on spins in SiC. While I have extensive expertise on diamond, the SiC platform was new to me. I participated to experimental measurements in Stuttgart and my contribution has been extremely important in modelling spin dynamics for a S=3/2system with small splitting between the transitions.
Collaborator Contribution My partners in Stuttgart contribute by enabling me to perform experiments that I could not perform at Heriot-Watt, due to the lack of a dedicated cryogenic setup.
Impact One paper published: R. Nagy et al, "Quantum properties of dichroic silicon vacancies in silicon carbide", Physical Review Applied 9 (3), 034022 (2018) One paper under review in Nature Communications: r. Nagy et al, "High-fidelity spin and optical control of single silicon vacancy centres in silicon carbide", arxiv:1810.10296 (2018) One more paper is currently being written
Start Year 2017
 
Description Electric sensing with defects in SiC 
Organisation Clas-SiC
Country United Kingdom 
Sector Private 
PI Contribution We are developing a technique to measure electric fields in SiC by looking at spin-active defects. This could be useful as a way to map electric fields in micro-electronic devices.
Collaborator Contribution Clas-SiC is interested in the technique we are developing, for device diagnostics. We have a joint project, funded by the Quantum Hub, where they provide SiC samples in-kind.
Impact None, yet
Start Year 2018
 
Description Electric sensing with defects in SiC 
Organisation Durham University
Department Durham University ESRC Impact Acceleration Account
Country United Kingdom 
Sector Academic/University 
PI Contribution We are developing a technique to measure electric fields in SiC by looking at spin-active defects. This could be useful as a way to map electric fields in micro-electronic devices.
Collaborator Contribution Clas-SiC is interested in the technique we are developing, for device diagnostics. We have a joint project, funded by the Quantum Hub, where they provide SiC samples in-kind.
Impact None, yet
Start Year 2018
 
Description Laser-writing of spin-defects in SiC 
Organisation University of Oxford
Department Department of Engineering Science
Country United Kingdom 
Sector Academic/University 
PI Contribution The goal of this work is to demonstrate increased spin readout efficiency by improving optical collection from spin centres in SiC. This will be done by creating solid immersion lenses registered on top of emitters. My team will create the solid immersion lenses and perform optical and spin characterisation.
Collaborator Contribution The Oxford team will create the spin defects by creating vacancies with short intense laser pulses, tuning the parameters to try to engineer different type of colour centres.
Impact Collaboration is under way, we expect outcomes in the coming months
Start Year 2021
 
Description Spin control in SiC electronic devices 
Organisation University of Warwick
Department School of Engineering
Country United Kingdom 
Sector Academic/University 
PI Contribution Our contribution is in the design of SiC opto-electronic devices integrating single-spin quantum emitters. Once the devices are fabricated by Warwick, we will characterise them and test them.
Collaborator Contribution Our collaborators at Warwick design and fabricate the required micro-electronic devices, building on their expertise in SiC microelectronics and power electronics.
Impact Not outputs area vailable yet, as we are still developing samples together
Start Year 2021